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US5U30
Transistor
Small switching (-20V, -1.5A)
US5U30
Features 1) The US5U30 conbines Pch MOSFET with a Schottky barrier diode in a single TSMT5 package. 2) Pch MOSFET have a low on-state resistance with a fast switching. 3) Pch MOSFET is reacted a low voltage drive(2.5V) 4) The Independently connected Schottky barrier diode have a low forward voltate. External dimensions (Unit : mm)
0.3
(4)
(3)
1.3 2.0 0.85Max.
(2) (5) (1)
0.2
1.7 2.1
0.2
0.17
0~0.1
0.15Max.
Each lead has same dimensions
Abbreviated symbol : U30
Applications Load switch, DC/DC conversion
Structure Silicon P-channel MOSFET Schottky Barrier DIODE
Equivalent circuit
(5) (4)
2
Packaging specifications
Package Type US5U30 Code Basic ordering unit (pieces) Taping TR 3000
1 (1) (2) 1 ESD protection diode 2 Body diode (3)
(1)Gate (2)Source (3)Anode (4)Cathode (5)Drain
Absolute maximum ratings (Ta=25C)
< MOSFET >
Parameter
Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Channel temperature < Di > Repetitive peak reverse voltage Reverse voltage Forward current Forward current surge peak Junction temperature < MOSFET AND Di > Total power dissipation Range of storage temperature Continuous Pulsed Continuous Pulsed
Symbol
VDSS VGSS ID IDP IS ISP Tch
Limits
-20 12 1 4 -0.4 -4 150
Unit V V A A A A C
PW 10s DUTY CYCLE 1% PW 10s DUTY CYCLE 1%
VRM VR IF IFSM Tj
25 20 0.5 2
150
V V A A C
60HZ / 1CYC.
PD Tstg
1.0 -55 to 150
W/TOTAL/MOUNTED ON A CERAMIC BOARD
C
0.77
0.65 0.65
1/4
US5U30
Transistor
Electrical characteristics (Ta=25C)

Parameter Symbol Min. IGSS - Gate-source leakage Drain-source breakdown voltage V(BR) DSS -20 IDSS - Zero gate voltage drain current VGS (th) -0.7 Gate threshold voltage - Static drain-source on-state - RDS (on) resistance - 0.7 Yfs Forward transfer admittance - Ciss Input capacitance - Coss Output capacitance - Crss Reverse transfer capacitance - td (on) Turn-on delay time - tr Rise time - td (off) Turn-off delay time - tf Fall time - Qg Total gate charge - Qgs Gate-source charge - Qgd Gate-drain charge
Pulsed
Typ. - - - - 280 310 570 - 150 20 20 9 8 25 10 2.1 0.5 0.5
Max. 10 - -1 -2.0 390 430 800 - - - - - - - - - - -
Unit A V A V m m m S pF pF pF ns ns ns ns nC nC nC
Conditions VGS=12V, VDS=0V ID=-1mA, VGS=0V VDS=-20V, VGS=0V VDS=-10V, ID=-1mA ID=-1A, VGS=-4.5V ID=-1A, VGS=-4V ID=-0.5A, VGS=-2.5V VDS=-10V, ID=-0.5A VDS=-10V VGS=0V f=1MHz ID=-0.5A VDD -15V VGS=-4.5V RL=30 RG=10 VDD -15V VGS=-4.5V ID=-1A RL=15 RG=10

Parameter Forward voltage Parameter Forward voltage drop Reverse leakage Symbol VSD Symbol VF IR Min. - Min. - - - Typ. - Typ. - - - Max. -1.2 Max. 0.36 0.47 100 Unit V Unit V V A Conditions IS=-0.4A, VGS=0V Conditions IF=0.1A IF=0.5A VR=20V
2/4
US5U30
Transistor
Electrical characteristic curves
10 VDS=-10V Pulsed
1000
Static Drain-Source On-State Resistance RDS(on)[m]
1000 VGS=-4V Pulsed
Static Drain-Source On-State Resistance RDS(on)[m]
VGS=-4.5V Pulsed
Drain Current : -ID (A)
1 Ta=125C 75C 25C -20C 0.1
100
Ta=125 C 75 C 25 C -25 C
100
Ta=125 C 75 C 25 C -25 C
0.01
0.001
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
10 0.1
1
10
10 0.1
1
10
Gate-Source Voltage : VGS[V]
Drain Current : -ID[A]
Drain Current : -ID[A]
Fig.1 Typical Transfer Characteristics
Fig.2 Static Drain-Source On-State Resistance vs.Drain Current
Fig.3 Static Drain-Source On-State Resistance vs.Drain Current
1000
Static Drain-Source On-State Resistance RDS(on)[m]
Static Drain-Source On-State Resistance RDS(on)[m]
350 300 250 200 150 100 50 0 0 2 4 6 8
ID=-0.75A -1.5A
100
Ta=125 C 75 C 25 C -25 C
Static Drain-Source On-State Resistance RDS(on)[m]
VGS=-2.5V Pulsed
400
Ta=25 C Pulsed
1000
Ta=25 C Pulsed
100
VGS=-2.5V -4.0V -4.5V
10 0.1
1
10
Drain Current : -ID[A]
10
12
10 0.1
1
10
Fig.4 Static Drain-Source On-State Resistance vs.Drain-Current
Gate-Source Voltage : -VGS[V]
Drain Current : -ID[A]
Fig.5 Static Drain-Source On-State Resistance vs.Gate-Source Voltage
Fig.6 Static Drain-Source On-State Resistance vs.Drain Current
10
Reverse Drain Current : -IDR[A]
VGS=0V Pulsed
10000
Ta=25 C f=1MHZ VGS=0V
1000
Capacitance : C [pF]
1
Ta=125 C 75 C 25 C -25 C
1000
Switching Time : t [ns]
Ta=25 C VDD=-15V VGS=-4.5V RG=10 Pulsed tf
100
td(off)
Ciss 100 Coss Crss
0.1
10
td(on) tr
0.01 0
0.5
1.0
1.5
2.0
10 0.01
0.1
1
10
100
1 0.01
0.1
1
10
Source-Drain Voltage : -VSD[V]
Drain-Source Voltage : -VDS[V]
Drain Current : -ID[A]
Fig.7 Reverse Drain Current vs. Source-Drain Current
Fig.8 Typical Capactitance vs.Drain-Source Voltage
Fig.9 Switching Characteristics
3/4
US5U30
Transistor
8 7 Ta=25 C VDD=-15V ID=-2.5A RG=10 Pulsed
1000
Ta=125 C 75 C 25 C -25 C
100
125 C
Gate-Source Voltage: -VGS [V]
6 5 4 3 2 1 0
Forward Current : IF [mA]
100
Reverse Current : IR[A]
10 1
75 C
10
0.1
25 C
0.01
-25 C
1 0.001 0.1 0.0001 0 0.1 0.2 0.3 0.4 0.5 0.6 0 10 20 30 40 Forward Voltage :VF [V] Reverse Voltage : VR[V]
0
1
2
3
4
5
6
Total Gate Charge : Qg[nC]
Fig.10 Dynamic Input Characteristics
Fig.11 Forward Temperature Characteristics
Fig.12 Reverse Temperature Characteristics
Measurement circuits
VGS 10% 50% Pulse Width 50% 90%
10%
VGS ID D.U.T. RL VDS
10%
VDS
90%
90%
RG
VDD
td(on) ton
tr
td(off)
tf toff
Fig.13 Switching Time Measurement Circuit
Fig.14 Switching Waveforms
VG Qg VGS
VGS
IG(Const)
ID
VDS
Qgs
RG D.U.T. RL
Qgd
VDD
Charge
Fig.15 Gate Charge Measurement Circuit
Fig.16 Gate Charge Waveforms
4/4
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document use silicon as a basic material. Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.0

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